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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9425053 B1

PDFFull Text
Date of Patent:
Aug. 23, 2016

Filed:

Jun. 27, 2014

Block mask litho on high aspect ratio topography with minimal semiconductor material damage

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Martin Glodde, Mahwah, NJ (US);

Steven J. Holmes, Albany, NY (US);

Daiji Kawamura, Albany, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

Steven J. Meyers

Primary Examiner:

Bac Au

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28123 (2013.01); H01L 21/28088 (2013.01); H01L 21/32139 (2013.01); H01L 29/66545 (2013.01);
Abstract

A trilayer stack that can be used as a block mask for forming patterning features in semiconductor structures with high aspect ratio topography is provided. The trilayer stack includes an organic planarization (OPL) layer, a titanium-containing antireflective coating (TiARC) layer on the OPL layer and a photoresist layer on the TiARC layer. Employing a combination of an OPL having a high etch rate and a TiARC layer that can be easily removed by a mild chemical etchant solution in the trilayer stack can significantly minimize substrate damage during lithographic patterning processes.

Find Patent Forward Citations

Glodde, Martin. (2016). Block mask litho on high aspect ratio topography with minimal semiconductor material damage (U.S. Patent No. 9425053). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9425053

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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