The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Dec. 22, 2006
Deva Pattanayak, Saratoga, CA (US);
Kuo-in Chen, Los Altos, CA (US);
The-tu Chau, San Jose, CA (US);
Deva Pattanayak, Saratoga, CA (US);
Kuo-In Chen, Los Altos, CA (US);
The-Tu Chau, San Jose, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
High mobility P-channel power metal oxide semiconductor field effect transistors. In accordance with an embodiment of the present invention, a power MOSFET is fabricated such that the holes flow in an inversion/accumulation channel, which is along the (110) crystalline plane, or equivalents, and the current flow is in the [110] direction, or equivalents, when a negative potential is applied to the gate with respect to the source. The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.