The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Feb. 24, 2014
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Jiezhi Chen, Yokohama, JP;

Tetsufumi Tanamoto, Kawasaki, JP;

Yuichiro Mitani, Kanagawa, JP;

Takao Marukame, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01); G11C 16/06 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/06 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/3495 (2013.01);
Abstract

A memory system according to an embodiment may have an integration unit and a prediction unit. The integration unit may detect substrate current flowing through a substrate of a non-volatile memory when the non-volatile memory with a memory cell which has binary or multivalued being the binary or more is written/erased. The integration unit may records an integration value of the detected substrate current into a storage. The prediction unit may predict a lifetime of the non-volatile memory based on the integration value which is recorded on the storage.


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