The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Feb. 19, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Reika Ichihara, Yokohama Kanagawa, JP;

Kikuko Sugimae, Kuwana Mie, JP;

Takayuki Miyazaki, Setagaya Tokyo, JP;

Yoshihisa Iwata, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0002 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); G11C 13/0038 (2013.01); G11C 13/0064 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0073 (2013.01);
Abstract

According to one embodiment, provided is a semiconductor storage device that includes a control circuit to control the voltage that is applied to the memory cell. The control circuit is configured to execute a reset operation that applies a reset voltage of a first polarity to a selected memory cell that is connected to a selected first wire and a selected second wire during a reset operation. The control circuit is configured to execute a cancel operation that applies a cancel voltage of a second polarity that is opposite to the first polarity to an unselected memory cell and at the same time can execute a verify operation that reads out the state of the selected memory cell by applying a readout voltage of the second polarity to the selected memory cell. The cancel voltage and the readout voltage are the same voltage value.


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