The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Oct. 10, 2014
Applicant:

Jungwoo Song, Hwaseong-si, KR;

Inventor:

Jungwoo Song, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/32 (2013.01); G11C 2213/72 (2013.01);
Abstract

A semiconductor memory device includes a variable resistance memory element connected between first and second conductive lines intersecting each other, and a PN junction diode connected between the variable resistance memory element and the first conductive line. The method of operating the semiconductor device includes supplying the variable resistance memory element with a first directional current flowing from the second conductive line to the first conductive line by applying a first forward bias to the PN junction diode, and supplying the variable resistance memory element with a second directional current flowing from the first conductive line to the second conductive line by applying a reverse bias to the PN junction diode immediately after applying a second forward bias to the PN junction diode.


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