The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

May. 30, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Ayako Takagi, Yokosuka, JP;

Shinichi Uehara, Tokyo, JP;

Tatsuo Saishu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02B 27/22 (2006.01); G02F 1/29 (2006.01);
U.S. Cl.
CPC ...
G02B 27/2214 (2013.01); G02F 1/134363 (2013.01); G02F 1/29 (2013.01); G02F 2001/134381 (2013.01); G02F 2001/294 (2013.01);
Abstract

According to one embodiment, a device includes first and second substrate units, a liquid crystal layer. The first substrate unit includes a first substrate, first and second electrodes, an extraction electrode, and a dielectric material layer. The second substrate unit includes a second substrate and a third electrode. The liquid crystal layer is provided between the first and second substrates. The first electrodes are provided on the first substrate to extend in a first direction. The second electrodes are provided on the first substrate and extend along the first direction. The extraction electrode is for electrically connecting the second electrodes. The third electrode is provided on the second substrate to extend in a second direction intersecting the first direction.


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