The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Nov. 23, 2010
Helge Riemann, Schulzendorf, DE;
Nikolai V. Abrosimov, Berlin, DE;
Joerg Fischer, Berlin, DE;
Matthias Renner, Koenigs Wusterhausen, DE;
Helge Riemann, Schulzendorf, DE;
Nikolai V. Abrosimov, Berlin, DE;
Joerg Fischer, Berlin, DE;
Matthias Renner, Koenigs Wusterhausen, DE;
FORSCHUNGSVERBUND BERLIN E.V., Berlin, DE;
Abstract
A method for producing a single crystal of semiconductor material having material properties of a zone-pulled single crystal includes providing a vessel transmissive to high frequency magnetic fields and having a granulate of a granular semiconductor material disposed therein and a first conductor disposed externally thereto. A high frequency current is supplied to a planar inductor disposed above the vessel, the planar inductor having a turn and a slit as a current supply so as to produce an open melt lake on the granulate by a temperature field at a surface of the granulate produced by thermal power of the planar inductor and a heating action of the first inductor, the melt lake being embedded in unmelted material of the granular semiconductor material and not being in contact with a wall of the vessel. A single crystal is pulled form the melt lake of the semiconductor material upwards.