The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Oct. 29, 2014
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Shiban Kishan Tiku, Camarillo, CA (US);
Viswanathan Ramanathan, Thousand Oaks, CA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/30 (2006.01); H01L 29/872 (2006.01); H01L 29/47 (2006.01); H01L 29/778 (2006.01); C23C 14/06 (2006.01); H01L 21/285 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
C23C 14/30 (2013.01); C23C 14/0641 (2013.01); H01L 21/28581 (2013.01); H01L 29/475 (2013.01); H01L 29/7785 (2013.01); H01L 29/872 (2013.01); H01L 29/0619 (2013.01);
Abstract
Gate metallization structures and methods for semiconductor devices are disclosed, wherein a refractory metal barrier is implemented to provide performance improvements. Transistor devices are disclosed having a compound semiconductor substrate and an electron-beam evaporated gate structure including a layer of tantalum nitride (TaNx), a layer of titanium (Ti) and a layer of gold (Au).