The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Aug. 02, 2013
Applicant:

Yanshan University, HeBei, CN;

Inventors:

Yongjun Tian, HeBei, CN;

Dongli Yu, HeBei, CN;

Bo Xu, HeBei, CN;

Julong He, HeBei, CN;

Zhongyuan Liu, HeBei, CN;

Wentao Hu, HeBei, CN;

Kun Luo, HeBei, CN;

Yufei Gao, HeBei, CN;

Zhisheng Zhao, HeBei, CN;

Assignee:

YANSHAN UNIVERSITY, Qinhuangdao, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 3/06 (2006.01); B82Y 30/00 (2011.01); C01B 21/064 (2006.01); C04B 35/645 (2006.01); C04B 35/5831 (2006.01);
U.S. Cl.
CPC ...
C01B 21/0648 (2013.01); B01J 3/062 (2013.01); B82Y 30/00 (2013.01); C04B 35/5831 (2013.01); C04B 35/645 (2013.01); B01J 2203/066 (2013.01); B01J 2203/0645 (2013.01); C01P 2002/60 (2013.01); C01P 2002/72 (2013.01); C01P 2004/02 (2013.01); C01P 2004/04 (2013.01); C01P 2004/64 (2013.01); C04B 2235/52 (2013.01); C04B 2235/5409 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/723 (2013.01); C04B 2235/781 (2013.01); C04B 2235/96 (2013.01);
Abstract

The invention relates to an ultrahard nanotwinned boron nitride bulk material and synthetic method thereof. Particularly, the invention discloses a nanocrystalline cubic boron nitride bulk material containing high density of twins and synthetic method thereof, in which a nanotwinned boron nitride bulk are synthesized from nanospherical boron nitride particles (preferably with a size of 5-70 nm) with onion-like structure as raw materials by using high temperature and high pressure synthesis. As compared with the prior arts, the nanotwinned boron nitride bulk obtained according to the invention has a much higher hardness than that of a normal cubic boron nitride single crystal. The nanotwinned boron nitride bulk has great prospects in applications, such as precision and ultra-precision machining, abrasives, drawing dies, and special optics as well as other fields.


Find Patent Forward Citations

Tian, Yongjun. (2016). Ultrahard nanotwinned boron nitride bulk materials and synthetic method thereof (U.S. Patent No. 9422161). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9422161

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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