The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Apr. 11, 2013
Asahi Kasei E-materials Corporation, Tokyo, JP;
ASAHI KASEI E-MATERIALS CORPORATION, Tokyo, JP;
Abstract
A light extraction product () for a semiconductor light emitting device is provided with a concavo-convex structure layer (), provided with a concavo-convex structure () on a surface thereof, having a first refractive index (n1) and a light extraction layer (), provided on the convex portion of the concavo-convex structure (), having a second refractive index (n2), where in a first light extraction layer () a distance Lcv between an average position Sh of tops of the convex-portions and a convex-portion upper interface average position Scv of the first light extraction layer () meets equation (1) 10 nm≦Lcv≦5000 nm, in the concavo-convex structure () a convex-portion average height H meets equation (2) 10 nm≦H≦5000 nm, an average pitch P meets equation (3) 50 nm≦P≦5000 nm, and the distance Lcv and the convex-portion average height H meet equation (4) 50 nm≦Lcv+H≦6000 nm. It is possible to improve light extraction efficiency from the semiconductor light emitting device using the light extraction product (), and further to enhance long-term reliability of the semiconductor light emitting device.