The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Jun. 12, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Se Hun Kang, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1616 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/065 (2013.01); H01L 45/124 (2013.01); H01L 45/1683 (2013.01);
Abstract
A method of fabricating a semiconductor integrated circuit that includes forming a lower electrode in a semiconductor substrate, forming an interlayer insulating layer including a phase-change region exposing the lower electrode on the semiconductor substrate, forming a first phase-change layer having a crystalline state along surfaces of the interlayer insulating layer and an exposed lower electrode, and growing a second phase-change layer on the first phase-change layer based on the crystallinity of the first phase-change layer to be filled in the phase-change region.