The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Jun. 23, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Brian A. Bryce, Chevy Chase, MD (US);

Josephine B. Chang, Mahopac, NY (US);

Matthew W. Copel, Yorktown Heights, NY (US);

Marcelo A. Kuroda, Auburn, AL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01L 41/08 (2006.01); H01L 41/047 (2006.01); H01L 41/02 (2006.01);
U.S. Cl.
CPC ...
H01L 41/0805 (2013.01); H01L 41/02 (2013.01); H01L 41/0477 (2013.01);
Abstract

A semiconductor device, a piezoelectronic transistor (PET) device, and a method of fabricating the PET device are described. The method includes forming a first stack of dielectric layers, forming a first metal layer over the first stack, forming a piezoelectric (PE) material on the first metal layer, and forming a second metal layer on the PE material. The method also includes forming a piezoresistive (PR) element on the second metal layer through a gap in a first membrane formed a distance d above the second metal layer.


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