The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Oct. 20, 2011
Applicants:
Jen-kan Yu, Pasadena, CA (US);
Slobodan Mitrovic, Pasadena, CA (US);
James R. Heath, South Pasadena, CA (US);
Inventors:
Jen-Kan Yu, Pasadena, CA (US);
Slobodan Mitrovic, Pasadena, CA (US);
James R. Heath, South Pasadena, CA (US);
Assignee:
CALIFORNIA INSTITUTE OF TECHNOLOGY, Pasadena, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/02 (2006.01); H01L 35/26 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 35/26 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); Y10T 428/24273 (2015.01); Y10T 428/24298 (2015.01);
Abstract
A nanomesh phononic structure includes: a sheet including a first material, the sheet having a plurality of phononic-sized features spaced apart at a phononic pitch, the phononic pitch being smaller than or equal to twice a maximum phonon mean free path of the first material and the phononic size being smaller than or equal to the maximum phonon mean free path of the first material.