The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Dec. 16, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyung-wook Hwang, Hwaseong-si, KR;

Han-kyu Seong, Seoul, KR;

Hun-jae Chung, Yongin-si, KR;

Nam-goo Cha, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/16 (2010.01); H01L 33/06 (2010.01); H01L 27/15 (2006.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 33/24 (2010.01); H01L 33/08 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/16 (2013.01); H01L 27/153 (2013.01); H01L 33/0054 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/62 (2013.01); H01L 33/20 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.


Find Patent Forward Citations

Loading…