The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Sep. 26, 2013
Applicant:

University of Florida Research Foundation, Inc., Gainesville, FL (US);

Inventors:

Ying Zheng, Redmond, WA (US);

Weiran Cao, Gainesville, FL (US);

Jiangeng Xue, Gainesville, FL (US);

Paul H. Holloway, Gainesville, FL (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/06 (2010.01); H01L 51/50 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01); H05B 33/14 (2006.01); H05B 33/22 (2006.01); H05B 33/26 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01); H01L 33/26 (2010.01); H01L 33/28 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); H01L 33/002 (2013.01); H01L 33/08 (2013.01); H01L 33/26 (2013.01); H01L 33/285 (2013.01); H01L 33/305 (2013.01); H01L 33/40 (2013.01); H01L 51/502 (2013.01); H05B 33/14 (2013.01); H05B 33/22 (2013.01); H05B 33/26 (2013.01); H01L 51/0037 (2013.01); H01L 51/0039 (2013.01);
Abstract

Quantum dot light emitting diodes (QD-LEDs) are formed that are transparent and emit light from the top and bottom faces. At least one electrode of the QD-LEDs is a dielectric/metal/dielectric layered structure, where the first dielectric comprises metal oxide nanoparticles or polymer-nanoparticle blends and is 10 to 40 nm in thickness, the metal layer is 5 to 25 nm in thickness, and the second dielectric layer is a nanoparticulate, polymer-nanoparticle blend or continuous layer of 30 to 200 nm in thickness and is situated distal to the light emitting layer of the QD-LED.


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