The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Feb. 17, 2015
Applicant:
Episil-precision Inc., Hsinchu, TW;
Inventors:
Assignee:
Episil-Precision Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03046 (2013.01); H01L 31/0312 (2013.01); H01L 31/035281 (2013.01);
Abstract
A nitride semiconductor structure is provided. The nitride semiconductor structure includes a substrate, a SiC nucleation layer, a composite buffer layer and a nitride semiconductor layer. The SiC nucleation layer is located on the substrate. The composite buffer layer is located on the SiC nucleation layer. The nitride semiconductor layer is located on the composite buffer layer. Besides, the nitride semiconductor structure is an AlN free semiconductor structure.