The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Aug. 29, 2014
Applicant:

Solarworld Industries Thueringen Gmbh, Amstadt, DE;

Inventor:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/046 (2014.01); H01L 31/05 (2014.01); H01L 31/0216 (2014.01); H01L 31/02 (2006.01); H01L 31/056 (2014.01); H01L 31/042 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/0504 (2013.01); H01L 31/18 (2013.01); H01L 31/02021 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/042 (2013.01); H01L 31/046 (2014.12); H01L 31/05 (2013.01); H01L 31/056 (2014.12); Y02E 10/50 (2013.01);
Abstract

A solar cell segment includes a substrate defining a rear side including a number of base doped regions and emitter doped regions. A dielectric layer and at least one metallizing layer are disposed on the rear side of the substrate. The at least one metallizing layer is structured in an interdigital comb-shaped contact deck arrangement and defines base contact decks for a number of base doped regions and emitter contact decks for a number of base doped regions. The at least one metallization layer is disposed between the rear side of the substrate and the dielectric layer. At least one first row of first contact openings is formed in the dielectric layer lying in a region of the base contact decks and at least one second row of second contact openings is formed in the dielectric layer lying in a region of the emitter contact decks.


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