The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Apr. 09, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Yoshiaki Toyoda, Matsumoto, JP;
Hideaki Katakura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
A semiconductor device can ensure predetermined current capacity under maintaining breakdown voltage characteristics and can promote size reduction. A first n-type offset-diffusion-region is disposed inside a p-type well region. In the first n-type offset-diffusion-region, a LOCOS film is disposed on the surface layer of a part sandwiched between an n-type drain region and n-type source region. In the first n-type offset-diffusion-region, a gate electrode is disposed on the part sandwiched between the LOCOS film and the n-type source region. In the first n-type offset-diffusion-region, impurity concentration is lower at the part beneath the gate electrode than at the part beneath the LOCOS film. Inside the first n-type offset-diffusion-region, a second n-type offset-diffusion-region is disposed at apart located toward the n-type source region through the LOCOS film so as to be separated from the LOCOS film by a distance x.