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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9419127 B1

PDFFull Text
Date of Patent:
Aug. 16, 2016

Filed:

Apr. 07, 2014

Semiconductor device including switching devices in an epitaxial layer

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Masaru Takaishi, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Shaun Campbell

Assistant Examiner:

Aneta Cieslewicz

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/866 (2006.01); H01L 29/872 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7808 (2013.01); H01L 29/78 (2013.01); H01L 29/7828 (2013.01); H01L 29/866 (2013.01); H01L 29/872 (2013.01); H01L 27/0255 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01); H01L 29/7813 (2013.01); H01L 29/7839 (2013.01);
Abstract

A semiconductor device includes switching devices in an epitaxial layer on a silicon substrate. Diffusion regions of different conductivity types are provided. In some instances, an electrode layer makes ohmic contact with the epitaxial layer and extends to, and makes ohmic contact with, a diffusion region electrically connected to the epitaxial layer. In some instances, diffusion regions of different conductivity types are arranged alternately one by one outward away from the epitaxial layer side.

Find Patent Forward Citations

Takaishi, Masaru. (2016). Semiconductor device including switching devices in an epitaxial layer (U.S. Patent No. 9419127). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9419127

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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