The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Feb. 26, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Yoshiharu Takada, Nonoichi Ishikawa, JP;

Takeshi Shibata, Nonoichi Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/283 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/283 (2013.01); H01L 21/28008 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/402 (2013.01);
Abstract

A semiconductor device includes a semiconductor region, a first electrode provided on the semiconductor region, a second electrode provided on the semiconductor region adjacent to and spaced from a side of the first electrode, and containing an identical material as the material of the first electrode, a third electrode provided on the semiconductor region in a location between the first electrode and the second electrode, a first insulating film provided between the semiconductor region and the third electrode, and a fourth electrode connected to the third electrode containing the same material as the material of the first electrode and the second electrode.


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