The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Nov. 11, 2015
Imec Vzw, Leuven, BE;
Clement Merckling, Evere, BE;
Nadine Collaert, Blanden, BE;
IMEC VZW, Leuven, BE;
Abstract
A method for growing a III-V semiconductor structure on a SiGesubstrate, wherein n is from 0 to 1 is provided. The method includes the steps of: (a) bringing a SiGesubstrate to a high temperature; (b) exposing the area to a group V precursor in a carrier gas for from 5 to 30 min, thereby forming a doped region at said area; (c) bringing the SiGesubstrate to a low temperature; (d) exposing the doped region to a group III precursor in a carrier gas and to a group V precursor in a carrier gas until a nucleation layer of III-V material of from 5 to 15 nm is formed on the nucleation layer; (e) bringing the SiGesubstrate to an intermediate temperature; and (f) exposing the nucleation layer to a group III precursor in a carrier gas and to a group V precursor in a carrier gas.