Reusable substrate bases, semiconductor devices using such reusable substrate bases, and methods for making the reusable substrate bases

Abstract

Reusable substrate bases for producing multilayer semiconductor devices are provided, as well as free-standing semiconductor devices and reusable substrate bases produced for the multilayer semiconductor devices. The reusable substrate bases comprise a Si-based substrate, a transition lattice overlayed thereon, and a sacrificial ZnO-based layer overlayed on the transition lattice. The transition lattice comprises alternating transition layers of aluminum nitride (AlN) and GaN or Al-doped GaN. The multilayer semiconductor devices comprise the aforesaid reusable substrate bases and a semiconductor stack which comprises a pair of p-n junction forming layers. Methods for producing the multilayer semiconductor devices, the reusable substrate base, as well as free standing semiconductor devices detached from the reusable substrate bases, are also provided.