The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Dec. 08, 2014
Altera Corporation, San Jose, CA (US);
Weimin Zhang, San Jose, CA (US);
Yanzhong Xu, Santa Clara, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
A bipolar junction transistor (BJT) is formed in a thin (less than about 20 nanometers) segment of a semiconductive material such as silicon where a lower portion of the semiconductive material has doping of a first conductivity type and forms a collector and an upper portion of the semiconductive material has doping of a second conductivity type and forms a base. Either a metal or a polysilicon emitter is formed on the base. An illustrative method for forming the BJT comprises forming first and second layers of a semiconductive material having first and second conductivity types, respectively; forming a hard mask on an upper surface of the second layer; using the hard mask to etch first and second channels in the semiconductive material on first and second opposing sides of the hard mask; removing the hard mask; and forming an emitter on the upper surface of the second layer.