The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Apr. 30, 2015
Texas Instruments Incorporated, Dallas, TX (US);
Dan Carothers, Lucas, TX (US);
Rajarshi Mukhopadhyay, Allen, TX (US);
Paul Brohlin, Parker, TX (US);
Benjamin Cook, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A semiconductor device is formed on a semiconductor substrate, including a primary portion of the substrate. An active component of the semiconductor device is disposed in the primary portion of the substrate. An interconnect region is formed on a top surface of the substrate. Semiconductor material is removed from the substrate in an isolation region, which is separate from the primary portion of the substrate; the isolation region extends from the top surface of the substrate to a bottom surface of the substrate. A dielectric replacement material is formed in the isolation region. The semiconductor device further includes an isolated component which is not disposed in the primary portion of the substrate. The dielectric replacement material in the isolation region separates the isolated component from the primary portion of the substrate.