The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Oct. 09, 2015
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Yasunori Sogoh, Kanagawa, JP;

Hiroyuki Ohri, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/335 (2011.01); H04N 5/361 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1463 (2013.01); H01L 27/14607 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H04N 5/335 (2013.01); H04N 5/361 (2013.01);
Abstract

A solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.


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