The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Aug. 05, 2014
Applicant:
Japan Display Inc., Tokyo, JP;
Inventors:
Toshio Miyazawa, Tokyo, JP;
Takahide Kuranaga, Tokyo, JP;
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); G09G 3/36 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G09G 3/3674 (2013.01); G09G 3/3677 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/0289 (2013.01); G09G 2330/021 (2013.01); H01L 27/3248 (2013.01); H01L 27/3276 (2013.01);
Abstract
If the threshold of a thin film transistor is depleted, a leak-induced voltage drop takes place and the desired voltage cannot be obtained. Depending on the severity of the phenomenon, the thin film transistor may fail to function. This disclosure offers a thin film transistor circuit having a first transistor connected to a low voltage, and a second transistor connected to the gate of the first transistor. When the gate voltage of the second transistor is changed from the high level to the low level, the gate voltage of the first transistor is brought to a voltage level lower than the low voltage.