The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Nov. 10, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Mohit Bajaj, Bangalore, IN;

Suresh Gundapaneni, Bangalore, IN;

Aniruddha Konar, Bangalore, IN;

Kota V. R. M. Murali, Bangalore, IN;

Edward J. Nowak, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 21/84 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/02175 (2013.01); H01L 21/02181 (2013.01); H01L 21/845 (2013.01); H01L 29/1033 (2013.01); H01L 29/42364 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01); H01L 29/66977 (2013.01);
Abstract

Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure positioned on the doped semiconductor layer; and a second gate structure positioned on the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer.


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