The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Dec. 02, 2015
Applicants:

Dong Sik Lee, Osan-si, KR;

Woong Seop Lee, Hwaseong-si, KR;

Seok Cheon Baek, Hwaseong-si, KR;

Byung Jin Lee, Seoul, KR;

Inventors:

Dong Sik Lee, Osan-si, KR;

Woong Seop Lee, Hwaseong-si, KR;

Seok Cheon Baek, Hwaseong-si, KR;

Byung Jin Lee, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/535 (2013.01); H01L 27/11556 (2013.01); H01L 29/42372 (2013.01);
Abstract

A semiconductor device, including gate electrodes perpendicularly stacked on a substrate; channel holes extending perpendicularly to the substrate, the channel holes penetrating through the gate electrodes, the channel holes having a channel region; gate pads extended from the gate electrodes by different lengths; and contact plugs connected to the gate pads, at least a portion of the gate pads having a region having a thickness less than a thickness of the gate electrode connected to the at least a portion of the gate pads.


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