The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Dec. 22, 2014
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Lujun Zou, Shanghai, CN;
Yun Yang, Shanghai, CN;
Shaobin Li, Shanghai, CN;
Shengfen Chiu, Shanghai, CN;
Abstract
A method for manufacturing a semiconductor device may include the following steps: preparing a stacked structure; processing the stacked structure to form a first gate structure and a preliminary structure; forming a dielectric material layer that covers at least the first gate structure; forming a dielectric layer using the dielectric material layer, such that a portion of the dielectric layer is positioned between the first gate structure and the preliminary structure; performing an annealing process on at least one of the dielectric material layer and the dielectric layer; processing the preliminary structure to form a second gate structure; and after the annealing process has been performed, forming a first metal silicide member on the second gate structure and/or forming a second metal silicide member on an active region associated with the second gate structure.