The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Oct. 28, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Sin-Woo Kang, Suwon-si, KR;
Sung-Dong Cho, Hwaseong-si, KR;
Abstract
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a gate structure formed in the interlayer insulating layer, an isolation layer formed in the semiconductor substrate, a through-silicon via formed to penetrate the semiconductor substrate, the interlayer insulating layer, and the isolation layer, and a first conduction type first impurity region coming in contact with the isolation layer and formed to surround only a portion of a sidewall of the through-silicon via in the semiconductor substrate.