The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Mar. 18, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Ki Hong Lee, Gyeonggi-do, KR;
Jin Ho Bin, Seoul, KR;
Soo Jin Kim, Seoul, KR;
Seung Ho Pyi, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76847 (2013.01); H01L 21/76879 (2013.01);
Abstract
A semiconductor device including a central region, side regions located in both sides of the central region, and conductive layers including a first barrier pattern formed in the central region, a material pattern formed in the first barrier pattern and having an etch selectivity with respect to the first barrier pattern, and a second barrier pattern formed in the material pattern; and insulating layers alternately stacked with the conductive layers.