The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Dec. 08, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Kyong-Bong Rouh, Gyeonggi-do, KR;
Shang-Koon Na, Gyeonggi-do, KR;
Yong-Seok Eun, Gyeonggi-do, KR;
Su-Ho Kim, Gyeonggi-do, KR;
Tae-Han Kim, Gyeonggi-do, KR;
Mi-Ri Lee, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 21/283 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76841 (2013.01); H01L 21/283 (2013.01); H01L 21/28061 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 21/76895 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 29/4941 (2013.01); H01L 27/10876 (2013.01);
Abstract
A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.