The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Sep. 02, 2014
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Yumi Nakajima, Yokkaichi Mie, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76805 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01);
Abstract
According to one embodiment, a method of manufacturing a semiconductor device is provided. The method includes forming a first insulating film, forming a first mask extending in first direction on the first insulating film, etching the first insulating film using the first mask, resulting in trenches extending in a first direction, forming a second mask on the trenches and the first mask, etching the first insulating film using the second mask and the first mask to form contact openings extending from the trenches.