The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Jan. 30, 2008
Applicants:
Danny Pak-chum Shum, Poughkeepsie, NY (US);
Alfred Vater, Dresden, DE;
John Power, Dresden, DE;
Wolfram Langheinrich, Dresden, DE;
Ulrike Bewersdorff-sarlette, Radebeul, DE;
Inventors:
Danny Pak-Chum Shum, Poughkeepsie, NY (US);
Alfred Vater, Dresden, DE;
John Power, Dresden, DE;
Wolfram Langheinrich, Dresden, DE;
Ulrike Bewersdorff-Sarlette, Radebeul, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/76 (2006.01); H01L 21/8238 (2006.01); H01L 27/108 (2006.01); H01L 21/311 (2006.01); H01L 27/105 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 27/105 (2013.01); H01L 27/11526 (2013.01); H01L 27/11531 (2013.01); H01L 27/11573 (2013.01);
Abstract
In one embodiment, a method of forming a semiconductor device is disclosed. A high-k dielectric is deposited of over a semiconductor body, and a portion of the high-k dielectric is wet etched an etchant selected from the group consisting of hot phos, piranha, and SC1.