The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Jul. 06, 2015
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Sook-Joo Kim, Icheon-si, KR;

Jae-Geun Oh, Icheon-Si, KR;

Hyung-Suk Lee, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02356 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/1641 (2013.01);
Abstract

An electronic device with improved variable resistance characteristics and a method for fabricating the same are provided. In an embodiment of the disclosed technology, a method for forming an electronic device with a semiconductor memory includes forming a crystalized doped layer over a substrate; forming a barrier layer over the doped layer; forming a metal layer over the barrier layer; and reacting the barrier layer with a portion of the metal layer. The electronic device and the method of fabricating the same according to embodiments of the disclosed technology may have improved variable resistance characteristics.


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