The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Mar. 19, 2015
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Abstract
The present disclosure provides a method of manufacturing a semiconductor device having silicon nitride with a tensile stress, the method comprising: c1) introducing and pre-stabilizing NHgas and Ngas; c2) introducing silane; c3) igniting the gases by a radio-frequency source; c4) depositing SiN; and c5) processing the SiN by using a nitrogen ion implantation. According to the present disclosure, the nitrogen content in the SiN film can be enhanced by the nitrogen ion implantation and impinging, thereby increasing the density of the film. In this way, the acid resistance of the SiN with tensile stress is enhanced, so that the SiN with tensile stress may be integrated in a dual-strained liner of a gate-last process, so as to effectively improve the properties and reliability of the device.