The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Dec. 12, 2012
Element Six Technologies Limited, London, GB;
Timothy Peter Mollart, Oxfordshire, GB;
Abstract
A method of fabricating a synthetic diamond coated compound semiconductor substrate, the method comprising: loading a composite substrate into a chemical vapor deposition (CVD) reactor, the composite substrate comprising a single crystal carrier wafer, a layer of single crystal compound semiconductor epitaxially grown on the carrier wafer, and an interface layer disposed on the layer of compound semiconductor, the interface layer forming a growth surface suitable for growth of synthetic diamond material thereon via a CVD technique; and growing a layer of CVD diamond material on the growth surface of the interface layer, wherein during growth of CVD diamond material a temperature difference at the growth surface between an edge and a center point thereof is maintained to be no more than 80° C., and wherein the carrier wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100.