The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Jul. 12, 2013
Applicant:

Nvidia Corporation, Santa Clara, CA (US);

Inventors:

Mahmut E. Sinangil, Medford, MA (US);

John W. Poulton, Chapel Hill, NC (US);

Assignee:

NVIDIA CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 29/02 (2006.01); G11C 11/419 (2006.01); G11C 11/41 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01); G11C 29/026 (2013.01); G11C 29/028 (2013.01); G11C 11/41 (2013.01); G11C 11/419 (2013.01);
Abstract

One embodiment provides, in a sense amplifier for an electronic memory array in which a selected memory cell drives a developing voltage differential according to a logic state of the memory cell, a method to store the logic state. The method includes poising source voltages of first and second transistors at levels offset, respectively, by threshold voltages of the first and second transistors. The method also includes applying the voltage differential between a gate of the first transistor and a gate of the second transistor, the first and second transistors configured to oppose each other in a cross-coupled inverter stage of the sense amplifier.


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