The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Aug. 15, 2014
Applicant:

Joled Inc., Tokyo, JP;

Inventors:

Shinya Ono, Osaka, JP;

Hitoshi Tsuge, Osaka, JP;

Kouhei Ebisuno, Kyoto, JP;

Assignee:

JOLED INC., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G09G 3/32 (2016.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/06 (2013.01); G09G 2320/045 (2013.01);
Abstract

A display device has a plurality of arrayed display pixels. A drive transistor includes a first gate electrode and supplies the current corresponding to a level of a luminance signal to the luminescence element. A switching transistor includes a source electrode, a drain electrode, a second gate electrode and a semiconductor layer. The semiconductor layer is faced with the second gate electrode and has, in a channel width direction perpendicular to a channel length direction of the switching transistor, a channel region with a first width and a remainder region with a second width larger than the first width. The source electrode or the drain electrode is connected to the first gate electrode. The source electrode and the drain electrode are provided on the semiconductor layer at an interval. The second gate electrode overlaps, in a plan view, the channel region entirely and the remainder region at least partially.


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