The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Jan. 27, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Postech Academy-industry Foundation, Pohang-si, KR;
Jun Seok Kim, Hwaseong-si, KR;
Jae Yoon Sim, Pohang-si, KR;
Hyun Surk Ryu, Hwaseong-si, KR;
Hwasuk Cho, Pohang-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Postech Academy-Industry Foundation, Pohang-si, KR;
Abstract
A synapse array based on a static random access memory (SRAM), a pulse shaper circuit, and a neuromorphic system are provided. The synapse array includes a plurality of synapse circuits. At least one synapse circuit among the plurality of synapse circuits includes at least one bias transistor and at least two cut-off transistors, and the at least one synapse circuit is configured to charge a membrane node of a neuron circuit connected with the at least one synapse circuit using a sub-threshold leakage current that passed through the at least one bias transistor.