The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

May. 06, 2013
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon, KR;

Inventors:

Byeong Hak Jo, Suwon, KR;

Tah Joon Park, Suwon, KR;

Yong Il Kwon, Suwon, KR;

Hyun Suk Lee, Suwon, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/044 (2006.01); G06F 3/041 (2006.01);
U.S. Cl.
CPC ...
G06F 3/044 (2013.01); G06F 3/0418 (2013.01);
Abstract

A capacitance sensing apparatus includes: a driving circuit unit applying a driving signal of a first period to a node capacitor; a first integrating circuit unit integrating voltage charged in the node capacitor to generate output voltage of which a voltage level is changed twice during a second period; a buffer capacitor charged or discharged by the output voltage of the first integrating circuit unit; a second integrating circuit unit integrating voltage charged in the buffer capacitor to generate output voltage of which a voltage level is changed twice during the first period; and an amplifying unit differentially amplifying non-inverted output voltage and inverted output voltage of the second integrating circuit unit, wherein the amplifying unit amplifies voltage corresponding to a difference between the non-inverted output voltage and the inverted output voltage during a reset section of the second integrating circuit unit to generate offset information.


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