The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Jul. 18, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Xiaohui Yao, Guangdong, CN;
Jehao Hsu, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present invention provides a TFT array substrate structure, which includes first and second gates (), a semiconductor layer (), first and second sources (), and first and second drains (). The first gate () and the first drain () are arranged to overlap in space so as to form a first overlapping zone (D). The second gate () and the second drain () are arranged to overlap in space so as to form a second overlapping zone (E). The first gate () has a first edge () corresponding to the first overlapping zone (D). The second gate () has a second edge () corresponding to the second overlapping zone (E). The first edge () and the first drain () intersect in space in an inclined manner. The second edge () and the second drain () intersect in space in an inclined manner. When the first and second drains () are moved relative to the first and second gates (), areas of the first overlapping zone (D) and the second overlapping zone (E) undergo identical change.