The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Jun. 28, 2010
Applicants:

Jianwen Zhao, Singapore, SG;

Lain-jong LI, Singapore, SG;

Peng Chen, Singapore, SG;

Bee Eng Mary Chan, Singapore, SG;

Inventors:

Jianwen Zhao, Singapore, SG;

Lain-Jong Li, Singapore, SG;

Peng Chen, Singapore, SG;

Bee Eng Mary Chan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07C 255/46 (2006.01); C07C 253/30 (2006.01); C07C 17/007 (2006.01); B01J 19/10 (2006.01); B01J 19/12 (2006.01); C01B 31/26 (2006.01); C07C 1/20 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01B 31/02 (2006.01); B82Y 10/00 (2011.01); G01N 27/414 (2006.01); H01L 51/00 (2006.01); H01M 4/62 (2006.01);
U.S. Cl.
CPC ...
C01B 31/0273 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); G01N 27/4146 (2013.01); H01L 51/0049 (2013.01); C01B 2202/22 (2013.01); H01L 51/002 (2013.01); H01M 4/625 (2013.01);
Abstract

The invention relates to a method of modifying electrical properties of carbon nanotubes by subjecting a composition of carbon nanotubes to one or more radical initiator(s). The invention also relates to an electronic component such as field-effect transistor comprising a carbon nanotube obtained using the method of the invention. The invention also relates to the use of the modified carbon nanotubes in conductive and high-strength nanotube/polymer composites, transparent electrodes, sensors and nanoelectromechanical devices, additives for batteries, radiation sources, semiconductor devices (e.g. transistors) or interconnects.


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