The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Jun. 05, 2015
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Christoph Schelling, Stuttgart, DE;

Ralf Reichenbach, Esslingen, DE;

Jens Frey, Filderstadt, DE;

Antoine Puygranier, Stuttgart, DE;

Assignee:

ROBERT BOSCH GMBH, Stuttgart, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0041 (2013.01); B81C 1/00293 (2013.01); B81B 2203/0315 (2013.01); B81C 1/00285 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/0145 (2013.01);
Abstract

To implement cavities having different internal pressures in joining two semiconductor elements, at least one of the two element surfaces to be joined is structured, so that at least one circumferential bonding frame area is recessed or elevated in comparison with at least one other circumferential bonding frame area. At least one connecting layer should then be applied to this structured element surface and at least two circumferential bonding frames should be structured out of this connecting layer on different surface levels of the element surface. The topography created in the element surface permits sequential bonding in which multiple cavities between the two elements may be successively hermetically sealed, so that a defined internal pressure prevails in each of the cavities.


Find Patent Forward Citations

Loading…