The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Dec. 19, 2014
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Jaume Roig-Guitart, Oudenaarde, BE;

Filip Bauwens, Ghent, BE;

Chin Foong Tong, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H03K 17/10 (2006.01); H02M 3/158 (2006.01); H02M 1/32 (2007.01);
U.S. Cl.
CPC ...
H03K 17/102 (2013.01); H02M 3/158 (2013.01); H02M 1/32 (2013.01);
Abstract

An electronic device can include a switch coupled to a switching node. In an embodiment, the switch has a breakdown voltage is less than 2.0 times the designed operating voltage. In another embodiment, the electronic device can further include another switch, wherein both switches are coupled to each other at a switching node. The switches can have different breakdown voltages. In a particular embodiment, either or both switches can include a field-effect transistor and a zener diode that are connected in parallel. The zener diode can be designed to breakdown at a relatively lower fraction of the designed operating voltage as compared to a conventional device. Embodiments can be used to reduce voltage overshoot and ringing at the switching node that may occur after changing the states of the first and second switches. Processes of forming the electronic device can be implemented without significant complexity.


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