The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Jun. 27, 2014
Applicant:
Ampleon Netherlands B.v., Nijmegen, NL;
Inventors:
Assignee:
Ampleon Netherlands B.V., Nijmegen, NL;
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 3/193 (2006.01); H03F 3/24 (2006.01); H03F 3/213 (2006.01); H01L 23/66 (2006.01); H03F 1/56 (2006.01); H01L 23/64 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H01L 23/66 (2013.01); H03F 1/56 (2013.01); H03F 3/213 (2013.01); H03F 3/245 (2013.01); H01L 23/642 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/49109 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/30111 (2013.01); H03F 2200/255 (2013.01); H03F 2200/423 (2013.01); H03F 2200/451 (2013.01);
Abstract
In RF power transistors, the current distribution along edges of the transistor die may be uneven leading to a loss in efficiency and in the output power obtained, resulting in degradation in performance. When multiple parallel dies are placed in a package, distribution effects along the vertical dimension of the dies are more pronounced. A RF power device () for amplifying RF signals is disclosed which modifies the impedance of a portion of the respective one of the input lead and the output lead and redistributes the current flow at an edge of the transistor die.