The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Dec. 21, 2012
Applicants:

Ronald A. Rojeski, Campbell, CA (US);

Steven Klankowski, Manhattan, KS (US);

Jun LI, Manhattan, KS (US);

Inventors:

Ronald A. Rojeski, Campbell, CA (US);

Steven Klankowski, Manhattan, KS (US);

Jun Li, Manhattan, KS (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/133 (2010.01); H01M 4/131 (2010.01); H01M 10/0525 (2010.01); H01M 4/70 (2006.01); H01M 4/134 (2010.01); H01G 9/042 (2006.01); H01M 4/139 (2010.01); B82Y 99/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01M 4/133 (2013.01); H01G 9/042 (2013.01); H01M 4/131 (2013.01); H01M 4/134 (2013.01); H01M 4/139 (2013.01); H01M 4/70 (2013.01); H01M 10/0525 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); B82Y 99/00 (2013.01); Y02E 60/122 (2013.01); Y02T 10/7011 (2013.01); Y10S 977/734 (2013.01);
Abstract

A novel hybrid lithium-ion anode material based on coaxially coated Si shells on vertically aligned carbon nanofiber (CNF) arrays. The unique cup-stacking graphitic microstructure makes the bare vertically aligned CNF array an effective Liintercalation medium. Highly reversible Liintercalation and extraction were observed at high power rates. More importantly, the highly conductive and mechanically stable CNF core optionally supports a coaxially coated amorphous Si shell which has much higher theoretical specific capacity by forming fully lithiated alloy. The broken graphitic edges at the CNF sidewall ensure good electrical connection with the Si shell during charge/discharge processes.


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