The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Dec. 17, 2014
Applicant:
Maxim Integrated Products, Inc., San Jose, CA (US);
Inventors:
Arvin Emadi, Santa Clara, CA (US);
Stanley Barnett, San Francisco, CA (US);
Assignee:
Maxim Integrated Products, Inc., San Jose, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01); H01L 31/0232 (2014.01); H01L 21/00 (2006.01); G01J 5/20 (2006.01); H01L 27/14 (2006.01); H01L 35/00 (2006.01); H01L 35/34 (2006.01); H01L 35/14 (2006.01); H01L 35/04 (2006.01); G01J 5/12 (2006.01); H01L 27/146 (2006.01); G01J 5/08 (2006.01); H01L 35/32 (2006.01);
U.S. Cl.
CPC ...
H01L 35/00 (2013.01); G01J 5/0853 (2013.01); G01J 5/12 (2013.01); H01L 27/14649 (2013.01); H01L 35/04 (2013.01); H01L 35/14 (2013.01); H01L 35/34 (2013.01); H01L 35/325 (2013.01);
Abstract
Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic.