The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Jan. 20, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ju Heon Yoon, Hwaseong-Si, KR;

Joon Woo Jeon, Seoul, KR;

Dong Hyuk Joo, Seoul, KR;

Jin Young Choi, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/382 (2013.01);
Abstract

A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.


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