The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Sep. 12, 2012
Young-jin Kim, Yongin-si, KR;
Doo-youl Lee, Yongin-si, KR;
Young-su Kim, Yongin-si, KR;
Chan-bin MO, Yongin-si, KR;
Young-sang Park, Yongin-si, KR;
Jae-ho Shin, Yongin-si, KR;
Sang-jin Park, Yongin-si, KR;
Sang-won Seo, Yongin-si, KR;
Min-chul Song, Yongin-si, KR;
Dong-seop Kim, Yongin-si, KR;
Young-Jin Kim, Yongin-si, KR;
Doo-Youl Lee, Yongin-si, KR;
Young-Su Kim, Yongin-si, KR;
Chan-Bin Mo, Yongin-si, KR;
Young-Sang Park, Yongin-si, KR;
Jae-Ho Shin, Yongin-si, KR;
Sang-Jin Park, Yongin-si, KR;
Sang-Won Seo, Yongin-si, KR;
Min-Chul Song, Yongin-si, KR;
Dong-Seop Kim, Yongin-si, KR;
Samsung SDI Co., Ltd., Yongin-si, KR;
Abstract
A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.